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首页> 外文期刊>Physica status solidi, B. Basic research >Magnetic phase transition for defect induced electron spins from fully metal–semiconductor separated SWCNTs
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Magnetic phase transition for defect induced electron spins from fully metal–semiconductor separated SWCNTs

机译:完全金属-半导体分离的SWCNT的缺陷诱导的电子自旋的磁性相变

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摘要

ESR experiments from PtRhRe grown and highly semiconductor—metal separated single-walled carbon nanotubes(SWCNTs) were performed at 9.45 GHz and temperatures Tbetween 0.39 and 200 K. No explicit evidence was found for aresponse from itinerant electrons in the metallic tubes. Rather,in both the metallic (M) and the semiconducting (SC) tubes,the ESR signal originates from quasi-localized defect spinsbut interactions with free electrons render the two systemscharacteristically different. The spin susceptibility was ofCurie–Weiss type for T≥10 K. For annealed samples it dropsfor lower T indicating a transition to a ferromagnetic state.Linewidths decrease and increase with increasing T for M andSC tubes, respectively. As a consequence they cross for the twosystems. Interaction of spins with free carriers in M tubes viaan RKKY type mechanism and increase of linewidth withtemperature for SC tubes due to spin–lattice interaction issuggested to be responsible for this.
机译:在9.45 GHz频率和0.39至200 K之间的温度下,进行了PtRhRe生长和高度半导体-金属分离的单壁碳纳米管(SWCNT)的ESR实验。未发现明显的证据表明金属管中的流动电子有反应。相反,在金属(M)管和半导体(SC)管中,ESR信号均源自准局部缺陷自旋,但与自由电子的相互作用使两个系统的特性有所不同。对于T≥10K,自旋磁化率是Curie–Weiss型。对于退火的样品,其磁化率降低,T降低,表明过渡到铁磁状态。M和SC管的线宽分别随着T的增加而减小和增加。结果,他们跨越了两个系统。 M型管中的自旋与自由载流子之间的相互作用是通过RKKY型机制引起的,并且由于自旋-晶格相互作用而导致SC管的线宽随温度增加而对此负责。

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