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首页> 外文期刊>Solid state ionics >Crystallization and electrochemical performance of La_(0.6)Sr_(0.4)Co_(0.2)Fe_(0.8)O_(3-δ)- Ce_(0.8)Gd_(0.2)O_(1.9) thin film cathodes processed by single solution spray pyrolysis
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Crystallization and electrochemical performance of La_(0.6)Sr_(0.4)Co_(0.2)Fe_(0.8)O_(3-δ)- Ce_(0.8)Gd_(0.2)O_(1.9) thin film cathodes processed by single solution spray pyrolysis

机译:单溶液喷雾热解La_(0.6)Sr_(0.4)Co_(0.2)Fe_(0.8)O_(3-δ)-Ce_(0.8)Gd_(0.2)O_(1.9)薄膜阴极的结晶和电化学性能

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摘要

La_(0.6)Sr_(0.4)Co_(0.2)Fe_(0.8)O_(3 - δ)-Ce_(0.8)Gd_(0.2)O_(1.9) (LSCF-CGO) thin films obtained by spray pyrolysis of a single precursor solution were investigated by XRD, TEM and impedance spectroscopy at annealing temperatures ranging from 500 to 900 °C. Films annealed at 600 °C contained a mixture of amorphous regions and crystalline regions composed of fine crystallites (< 5 nm). Annealing above 600 °C increased the ratio of crystalline to amorphous material, led to the segregation of the films into distinct LSCF and CGO phases, and promoted grain growth. The electrical behavior of the films depended on annealing temperature. At testing temperatures of 400 °C and below, the polarization resistance of films with lower annealing temperatures was larger than the polarization resistance of films with higher annealing temperatures. However, at testing temperatures of 500 °C and above the polarization resistance of films with lower annealing temperatures was equal to or lower than the polarization resistance of films with higher annealing temperatures. This was reflected by the activation energy that decreased with increasing annealing temperature. The varying electrical behavior may be related to microstructural changes that caused bulk diffusion to be the rate-limiting step in films with lower annealing temperatures and oxygen dissociation to be the rate-limiting step in films with higher annealing temperatures.
机译:通过喷雾热解单一前体获得的La_(0.6)Sr_(0.4)Co_(0.2)Fe_(0.8)O_(3-δ)-Ce_(0.8)Gd_(0.2)O_(1.9)(LSCF-CGO)薄膜通过XRD,TEM和阻抗光谱在500至900°C的退火温度下对溶液进行了研究。在600°C退火的薄膜包含非晶区和由微晶(<5 nm)组成的结晶区的混合物。高于600°C的退火会增加结晶与非晶材料的比率,导致薄膜偏析成不同的LSCF和CGO相,并促进晶粒生长。薄膜的电性能取决于退火温度。在400℃以下的测试温度下,退火温度较低的膜的极化电阻大于退火温度较高的膜的极化电阻。然而,在500℃以上的测试温度下,具有较低退火温度的膜的极化电阻等于或低于具有较高退火温度的膜的极化电阻。这由活化能随退火温度升高而降低而反映出来。变化的电学行为可能与微观结构的变化有关,该微观结构的变化导致体扩散成为退火温度较低的薄膜中的限速步骤,氧离解成为退火温度较高的薄膜中的限速步骤。

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