首页> 外文期刊>Solid state sciences >The layer crystal structure of [In_2(C_2O_4)_3(H_2O)_3]·7H_2O and microstructure of nanocrystalline In_2O_3 obtained from thermal decomposition
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The layer crystal structure of [In_2(C_2O_4)_3(H_2O)_3]·7H_2O and microstructure of nanocrystalline In_2O_3 obtained from thermal decomposition

机译:[In_2(C_2O_4)_3(H_2O)_3]·7H_2O的层晶体结构和通过热分解获得的纳米晶In_2O_3的微观结构

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摘要

A new indium oxalate, [In_2(C_2O_4)_3(H_2O)_3]·7H_2O, with a layered structure has been synthesised from precipitation methods at room temperature. It crystallises with a monoclinic symmetry, space group P2_(1/c)(No.14), a = 8.7456(1)a, b = 11.1479(2)A, c = 21.9376(4)A, β = 112.1(1)°, V = 1979.98(6)A~3 and Z = 4. The structure is built from neutral [In_2(C_2O_4)_3(H_2O)_3] corrugated layers, between which water molecules are intercalated. The layers are built from chains with two different sequences of indium atoms and bichelating oxalate groups. Two independent indium atoms are present in the structure with two coordination polyhedra, i. e., InO_8 as a distorted square-based antiprism and InO_7 as a nearly regular pentagonal-based bipyramid. The thermal decomposition has been studied in situ by temperature dependent X-ray diffraction and thermogravimety. The final product is nanocrystalline indium oxide. The microstructure of the oxide has been characterised with both the Voigt/Langford method based on the integral breadth and the whole pattern fitting approach. The size of the isotropic crystallites increases from 322 to 924 A, while microstrains decrease, in the annealing temperature range 500-750 ℃.
机译:利用室温沉淀法合成了一种新的草酸铟[In_2(C_2O_4)_3(H_2O)_3]·7H_2O。它以单斜晶对称结晶,空间群P2_(1 / c)(14号),a = 8.7456(1)a,b = 11.1479(2)A,c = 21.9376(4)A,β= 112.1(1) )°,V = 1979.98(6)A〜3,Z =4。该结构由中性[In_2(C_2O_4)_3(H_2O)_3]波纹层构建,水分子插入其中。这些层是由具有两个不同铟原子序列和草酸二螯合基团的链构成的。结构中存在两个独立的铟原子,带有两个配位多面体,即。例如,InO_8是扭曲的基于正方形的棱镜,而InO_7是几乎是规则的基于五边形的双金字塔。已经通过与温度有关的X射线衍射和热引力原位研究了热分解。最终产物是纳米晶体氧化铟。氧化物的微观结构已经通过基于积分宽度的Voigt / Langford方法和整个图案拟合方法进行了表征。在500-750℃的退火温度范围内,各向同性的晶粒尺寸从322 A增加到924 A,而微应变减小。

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