Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

摘要

The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.