The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons and 65-MeV Protons

摘要

The origin of a broad U band in spectra obtained using deep-level transient spectroscopy (DLTS) on n-GaAs irradiated with fast neutrons and 65-MeV protons was investigated. It is believed that this band is presumably a superposition of two peaks related to two defects P2 and P3 which have been well documented in GaAs and reside within defect clusters. THe DLTS spectra were calculated taking into account the nonuniform distribution of these defects in a sample and the built-in electric fields induced by corresponding inhomogeneities.