The fabrication of filter-less fluorescence detection sensor array using CMOS image sensor technique

摘要

A novel sensor array, which is filter-less fluorescence detection sensor, was successfully fabricated using CMOS 5 mu m silicon integrated circuit technology. Previously filter-less fluorescence detection sensors were proposed and fabricated, and they were able to sense fluorescence intensity. CMOS image sensor technique was applied for the filter-less fluorescence detection sensor, and it was able to operate a charge accumulation mode. Consequently, it was confirmed that general CMOS image sensor technique can be applied to the novel filter-less fluorescence detection sensor. (c) 2006 Elsevier B.V. All rights reserved.