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Electrical properties of Al_2O_3-doped ZnO varistors prepared by sol-gel process for device miniaturization

机译:溶胶-凝胶法制备的Al_2O_3掺杂ZnO压敏电阻的电学性能

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摘要

Al_2O_3-doped ZnO varistors with high performance have been fabricated with nano composite powders, which were prepared by the sol-gel method. The xerogels, calcined powders and sintered material ceramics were fully characterized. The electrical properties and grain boundary characteristics were measured. The average grain size decreased from 4.4 μm to 3.0 μm and the breakdown voltage increased from 720 V/cm to 1160 V/cm as the amount of Al_2O_3 increased from 0.0 wt.% to 0.40 wt.%. 2 ms square-wave test indicates that the energy capability was better in a sol-gel derived ZnO varistor than a conventional sample and was enhanced by Al_2O_3 doping. Improved electrical properties of sol-gel derived ZnO varistors is attributed to the smaller grain size and more uniform distribution of additives. Al_2O_3-doped ZnO varistor obtained from sol-gel process is useful for device miniaturization.
机译:利用溶胶-凝胶法制备的纳米复合粉体制备了高性能的Al_2O_3掺杂ZnO压敏电阻。充分表征了干凝胶,煅烧粉末和烧结材料陶瓷。测量了电性能和晶界特性。随着Al_2O_3的量从0.0重量%增加到0.40重量%,平均晶粒尺寸从4.4μm减小到3.0μm,击穿电压从720 V / cm增加到1160 V / cm。 2 ms方波测试表明,溶胶-凝胶衍生的ZnO压敏电阻的能量性能优于常规样品,并且通过Al_2O_3掺杂得到了增强。溶胶-凝胶衍生的ZnO压敏电阻电性能的提高归因于较小的晶粒尺寸和更均匀的添加剂分布。由溶胶-凝胶法获得的Al_2O_3掺杂的ZnO压敏电阻可用于器件小型化。

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