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Ab initio simulation of the oxygen vacancy bistability in pure and Ge-doped alpha-quartz

机译:从头开始模拟纯Ge和掺Ge的氧空位双稳态

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The influence of germanium impurities on formation energy and transition energies between the ground singlet and the first excited triplet states of the oxygen vacancy in a-quartz, is studied theoretically using an ab initio embedded cluster approach in an unrestricted Hartree-Fock (UHF) linear combination of atomic orbitals (LCAO) framework; electron correlation effects are evaluated a posteriori using the correlation-only functional proposed by Perdew and Wang. Impurities lower the energy of the singlet state and destabilize the triplet. Consequently, defect formation energy decreases and transition frequencies increase proportionally to the number of Ge atoms neighbouring the vacancy. In the triplet state, the transition to the puckered configuration is considered; the role of Ge impurities is, in this case, to decrease the activation barrier for the transition and to enhance the difference in stability between puckered and normal configurations of the vacancy. The puckering process leads to the creation of two stable E' centres and is, therefore, interesting in connection to Bragg gratings writing by UV irradiation of silica glasses. [References: 37]
机译:在无限制Hartree-Fock(UHF)线性模型中,使用从头算嵌入簇方法,从理论上研究了锗杂质对a石英中氧空位的基态单重态与第一激发三重态之间的形成能和跃迁能的影响。原子轨道组合(LCAO)框架;使用Perdew和Wang提出的仅相关函数对电子相关效应进行后验评估。杂质会降低单重态的能量并破坏三重态的稳定性。因此,缺陷形成能降低,跃迁频率与空位附近的Ge原子数成正比。在三重态下,考虑过渡到褶皱的构型。在这种情况下,Ge杂质的作用是减少过渡的激活势垒,并增强皱纹和空位构型之间稳定性的差异。褶皱过程导致产生两个稳定的E'中心,因此,与通过石英玻璃的UV辐射写入布拉格光栅有关,这很有趣。 [参考:37]

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