Tailored growth of in situ Al4SiC4 in laser melted aluminum melt

摘要

The crystallization and growth of in situ crystals during non-equilibrium laser rapid melting/solidification process is an important research topic in the fields of both Applied Physics and Materials Science. The present paper studies the development mechanisms of in situ formed Al4SiC4 ceramic phase within the selective laser melted SiC/AlSi10Mg composites. Two different-structured Al4SiC4 having strip and particle morphologies were disclosed and their growth mechanisms were influenced by laser linear energy density (LED). An elevated LED resulted in a larger degree formation of strip-structured Al4SiC4 with the gradually coarsened crystal sizes in its length and thickness. The homogeneously dispersed particle-shaped Al4SiC4 exhibited a considerably refined nanostructure with a proper increase in LED, but showing a significant coarsening of particles at an excessive LED.