The performance study of OLED based on Cs2O doped Ag2O thin layer structure as the electronic injection layer

摘要

The effect on the properties of organic electroluminescent devices was studied using various electronic injection layers. As a result, the electron injection layer by Cs2O doped Ag2O, when the mass fraction was 17% and the thickness was 1 nm, the performance of the device was significantly higher than the single Cs2O and LiF as electronic injection layer. The maximum power efficiency reached 0.91 lm/W, which was higher than that of Cs2O 0.64 lm/W and LiF 0.32 cd/A raised 1.42 times and 2.84 times, respectively. In addition, the light voltage of the doping device was 8 V, and that of the Cs2O and LiF device was 9 V. So the turn- on voltage was reduced.