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首页> 外文期刊>Microwave and optical technology letters >EXACT DESIGN OF EVANESCENT-WAVE AMPLIFICATION USING BILAYER PERIODIC CIRCUIT STRUCTURES
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EXACT DESIGN OF EVANESCENT-WAVE AMPLIFICATION USING BILAYER PERIODIC CIRCUIT STRUCTURES

机译:使用双层周期电路结构的精确的波放大率设计

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摘要

An efficient method is presented to design the evanescent wave amplification exactly by cascading two layers of periodic series-shunt capacitors and inductors, which simulate a bilayer of magnetic and electric plasmas. Based on the presented method, equivalent lumped parameters of circuit structures are retrieved, from which the evanescent-wave amplification (EWA) is obtained at a designed frequency. Full-wave simulations show that the relative offset of the EWA frequency is less than 0.1%. The structure has been fabricated and measured, and the measurement results have good agreements with the simulation results. The proposed method can be used to design other periodic circuit structures, and the exact design of EWA can be used in the fabrication of novel components.
机译:提出了一种有效的方法,通过级联两层周期性的串联并联电容器和电感器来精确地设计van逝波放大,这两个周期的模拟了电磁等离子体和电等离子体的双层结构。基于提出的方法,检索电路结构的等效集总参数,从中以设计频率获得e逝波放大倍数(EWA)。全波仿真表明,EWA频率的相对偏移小于0.1%。该结构已经制作完成并进行了测量,测量结果与仿真结果吻合良好。所提出的方法可用于设计其他周期性电路结构,并且EWA的精确设计可用于制造新型组件。

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