CONTROLLABLE TERAHERTZ WAVE ATTENUATOR

摘要

A new type of optically controllable terahertz wave attenuator using high-resistivity silicon wafer is developed and tested. Without optical excitation, the high-resistivity silicon is a lossless dielectric material at terahertz wave region. When the high-resistivity silicon wafer is optically excited, free carriers are generated, and the silicon wafer becomes a lossy dielectric. We study theoretically and demonstrate experimentally light-controllable terahertz wave of the high-resistivity silicon wafer. The results show that more than 10-dB attenuation of the novel terahertz wave attenuator is obtained at frequency of 0.3 THz. The proposed device can be used in future terahertz wave communication systems.