Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance

摘要

Ce, Nd and Eu doped BSO crystals 20x20x100mm(3) in size have been grown by vertical Bridgman method, and the doped effects on radiation resistance of BSO have also been studied for the first time. Nd and Eu dopings were found to improve the radiation resistance of BSO. However. Ce and Nd dopings degrade the light output of BSO except that Eu doping has almost no effect on it. Therefore. Eu may be the most promising dopant candidate for improving the scintillation properties of BSO crystal. References: 8