Formation of nanorod InGaN/GaN multiple quantum wells using nikel nano-masks and dry etching for InGaN-based light-emitting diodes

摘要

In recent years, GaN-based nanorods have attracted considerable interest for potential applications in electronic and optoelectronic devices due to the quantum confinement and strain relaxation effect. Although a host of technologies are emerging for the nanorod structure growth and fabrication, a simple method using self-assembled Ni nano-masks and dry etch to form InGaN/GaN nanorod multiple quantum wells (MQWs) has been developed. In this paper, we briefly review the previous developments of GaN-based nanorods, then the particular technology for the fabrication of nanorod InGaN/GaN MQWs using Ni nano-masks and dry etching has been introduced, and the formation of Ni nano-masks on GaN surface is discussed in detail. Furthermore, various structures of high efficient light emitting diodes (LEDs) based on this method are reviewed, the surface nano-roughed process for InGaN/GaN LEDs and nanorod InGaN/GaN LEDs fabrication using Ni nano-masks have been presented. (C) 2014 Elsevier Ltd. All rights reserved.