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首页> 外文期刊>Bulletin of the Korean Chemical Society >Molecular Emission of CF_4 Gas in Low-pressure Inductively Coupled Plasma
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Molecular Emission of CF_4 Gas in Low-pressure Inductively Coupled Plasma

机译:低压感应耦合等离子体中CF_4气体的分子发射

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摘要

CF4 gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes.For application to the etching process and environmental control,the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of CF_4 gas.In terms of the analysis of the spectra,trace CF radical by A-X and B-X transitions was detected.The other CF_X radicals,such as CF_2 and CF_3,were not seen in this experiment whereas strong C and C_2 emissions,dissociation products of CF_4 gas,were observed.
机译:CF4气体是半导体制造工艺中用于干法刻蚀的最常见化学物质之一。为了应用于刻蚀过程和环境控制,采用低压感应耦合等离子体(LP-ICP)获得CF_4气体的光谱。在光谱分析方面,检测到了由AX和BX跃迁引起的痕量CF自由基。在本实验中未见其他CF_X自由基,例如CF_2和CF_3,而强C和C_2排放是CF_4气体的离解产物,被观察。

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