Low frequency noise in gate and drain of PHEMT's and related correlation

摘要

Low frequency noise investigations have been carried out in GaAs based psuedomorphic high electron mobility in order to model the up-converted noise in nonlinear applications of these devices. Gate and channel noises are studied versus frequency and versus device biases. The results are analysed with an equivalent circuit issued from conduction investigations. Correlation between input and output noises is also measured. For V{sub}(GS) 0 V, the access source resistance must be taken into count.