Significant Effects of the D− Band on the Hall Coefficient and the Hall Mobility of n‐InP

摘要

The Hall‐effect measurement data on n‐InP samples reported in the literature are analyzed on the basis of an impurity‐Hubbard‐band model to show the significant effects of the top Hubbard band (D− band) on the Hall coefficient and the Hall mobility. The activation energy E2 of hopping drift mobility in the top Hubbard band is deduced and is shown to obey the relation of E2∝(dND−dNDcr), where dND is the average net donor separation and dNDcr is its critical value at which the metal–insulator transition occurs.