Design of Ka-band monolithic image rejection mixer

摘要

In this paper, a 30-40 GHz monolithic image rejection mixer is described. The mixer employs two drain LO injection mixer cells, which can perform well even with zero drain bias voltage. Also it employs Lange Coupler for RF quadrature signal generation. The mixer is fabricated by a commercial 0.18-mu m pseudomorphic high electron-mobility transistor (pHEMT) process. It achieves image rejection ratio of more than 20.4 dB and conversion loss of less than 12.6 dB in the frequency range of 30 to 38 GHz.