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Filling mechanism in microvia metallization by copper electroplating

机译:铜电镀微孔金属化的填充机理

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This work explores the mechanism of microvia filling by copper electroplating using a printed circuit board (PCB) with a specific pattern design. The microvias employed in this work had no sidewall copper layer. The outer and inner copper layers of these microvias that had no sidewall copper layer were together connected to the cathode during electroplating in order to clarify the mechanism of bottom-up filling. A plating formula that was composed of CuSO{sub}4, H{sub}2SO{sub}4, polyethylene glycol (PEG), bis(3-sulfopropyl) disulfide (SPS), Cl{sup}- and Janus Green B (JGB) was employed as a model formula for studying the filling mechanism. The results showed that bottom-up filling stemmed from two crucial factors. One was the sidewall growth of the microvia, increasing the surface coverage of an accelerator; the other was the convection-dependent adsorption (CDA) of additives, leading to different copper deposition rates on the outer and inner copper layers. When a leveler was present in the plating solution, CDA behavior dominated the filling mechanism, regardless of whether a sidewall copper layer was present. On the other hand, the mechanism of coverage accumulation of the accelerator was dominant only when the microvia possessed a sidewall copper layer and no leveler was present in the plating solution.
机译:这项工作探索了使用具有特定图案设计的印刷电路板(PCB)通过铜电镀进行微孔填充的机制。在这项工作中使用的微孔没有侧壁铜层。这些不具有侧壁铜层的微通孔的内铜层和内铜层在电镀期间一起连接到阴极,以阐明自下而上填充的机理。由CuSO {sub} 4,H {sub} 2SO {sub} 4,聚乙二醇(PEG),双(3-磺丙基)二硫化物(SPS),Cl {sup}-和Janus Green B( JGB)被用作模型公式来研究填充机理。结果表明,自下而上的填充源于两个关键因素。一种是微孔的侧壁生长,增加了促进剂的表面覆盖率;另一种是微孔的侧壁生长。另一种是添加剂的对流依赖性吸附(CDA),导致铜在外铜层和内铜层上的沉积速率不同。当电镀液中存在整平剂时,无论是否存在侧壁铜层,CDA行为均主导着填充机理。另一方面,仅当微通孔具有侧壁铜层并且镀液中不存在整平剂时,促进剂的覆盖累积的机理才是主要的。

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