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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Doped thieno3,4-bthiophene-based copolymers for p-type organic thermoelectric materials
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Doped thieno3,4-bthiophene-based copolymers for p-type organic thermoelectric materials

机译:掺杂噻吩并3,4-b噻吩基共聚物对p型有机热电材料

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摘要

In this work, two conjugated polymers named PTbTTVT and PTbTTVT-F were obtained by TbT (thieno3,4-bthiophene) derivatives and linker TVT (1,2-bis(3-tetradecylthiophen-2-yl)ethene) copolymerization. PTbTTVT showed good orientation and better charge mobility, while the introduction of fluorine results in a disordered stacking and inferior hole mobility of PTbTTVT-F. Through the detailed study of the thermoelectric performance of polymers, we found that they both exhibited good performance with the best power factor (PF) of over 35 mu W m(-1) K-2. Although PTbTTVT-F showed much worse hole mobility compared with PTbTTVT, it could gain similar or superior PF when the suitable dopants were selected. The results implied that polymers with less ordered stacking could have more tolerance for the disruption of the dopant, and exploiting amorphous materials with prominent mobility might be a useful strategy to gain high performance organic thermoelectric materials (OTEs).
机译:本工作通过TbT(噻吩并[3,4-b]噻吩)衍生物和接头TVT(1,2-双(3-十四烷基噻吩-2-基)乙烯)共聚制备了两种共轭聚合物PTbTTVT和PTbTTVT-F。PTbTTVT表现出良好的取向性和更好的电荷迁移率,而氟的引入导致PTbTTVT-F的无序堆积和较差的空穴迁移率。通过对聚合物热电性能的详细研究,我们发现它们都表现出良好的性能,最佳功率因数(PF)超过35 mu W m(-1) K-2。尽管与PTbTTVT相比,PTbTTVT-F的空穴迁移率要差得多,但当选择合适的掺杂剂时,它可以获得相似或更好的PF。结果表明,具有较少有序堆叠的聚合物对掺杂剂的破坏具有更大的耐受性,并且利用具有突出迁移率的非晶材料可能是获得高性能有机热电材料(OTE)的有用策略。

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