The 2ndash;0 band of theAthinsp;2Pgr;ithinsp;larr;thinsp;Xthinsp;2Sgr;+system of SiN near 3.3 mgr;m

摘要

The observation and analysis of 187 lines in the 2ndash;0 band of theAthinsp;2Pgr;ithinsp;larr;thinsp;Xthinsp;2Sgr;+system of the SiN radical are described. The 2ndash;0 band, which lies near 3.3 mgr;m, has been recorded with a tunable difference frequency system and discharge amplitude modulation. The analysis gives improved molecular constants for the ground and first excited states, including the first lambda doubling parameters for theAthinsp;2Pgr; state.