The radio frequency characterization of Cu/TiN/Pb(Zr,Ti)O_(3) stack on glass is performed using coplanar transmission lines. A dielectric relaxation is evidenced around 10 GHz by the correlated decrease in the dielectric constant K together with the dielectric losses increase versus frequency. This phenomenon is attributed to domain wall relaxation. The ferroelectric nature of Pb(Zr,Ti)O_(3) (PZT) thin films is observed until 40 GHz with a hysteresis curve of K versus dc bias. The high K value (K approx 1200) combined with a high tunability (approx35percent) and moderate losses (approx1percent) suggest that PZT films could be well suited for tunable devices for frequencies lower than 5 GHz.
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