Dependence of charge trapping and tunneling on the silicon-nitride (Si_(3)N_(4)) thickness for tunnel barrier engineered nonvolatile memory applications

摘要

Charge trapping and tunneling characteristics of silicon-nitride (Si_(3)N_(4)) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory (NVM). A critical thickness of Si_(3)N_(4) layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress method. As a result, the optimization of Si_(3)N_(4) thickness considerably improved the performances of NVM.