Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride

摘要

The effects of hot carrier stress (HCS) at elevated temperature on a device with ultrathin silicon oxynitride have been investigated. It was shown that the degradation of the device was more significant at elevated temperature compared with at room temperature. This behavior attributed to more generation of interface states due to an increase in the high-energy tail electrons. By the theory of electron-electron scattering, the threshold voltage shift was the most severe at the condition of V_(G) > V_(D). However, based on the results of extrapolating the device lifetime, the worst case stress condition under HCS was the V_(G)(velence)V_(D) condition at elevated temperature due to a higher generation rate.