Visible photoluminescence in thermally annealed Bi implanted SiO2 films

摘要

Photoluminescence (PL) from Bi+ implanted SiO2 films prepared by thermal oxidation has been studied as a function of annealing temperature. Bi ions were implanted at room temperature with an energy of 200 keV and doses from 1 x 10(14) to 1 x 10(16) ions cm(-2). After annealing, some samples showed two broad intense PL bands with peak energies of 1.8 and 2.1 eV. These 1.8 and 2.1 eV PL bands were clearly distinguished from the PL owing to SiO2 defects. The results of transmission electron microscopy and X-ray photoelectron spectroscopy measurements indicated that the structural and chemical conditions of implanted Bi in SiO2 were drastically changed with annealing. The origin of the 1.8 and 2.1 eV PL bands is discussed. (C) 1998 Elsevier Science S.A. All rights reserved. References: 14