Hehyphen;plasma assisted epitaxy for highly resistive, optically fast InPhyphen;based materials

摘要

InP and related quaternaries (InGaAsP) have been grown by conventional gas source molecular beam epitaxy while simultaneously exposing the growth surface to a He plasma stream generated by electron cyclotron resonance. For growth temperatures from 400 to 450thinsp;deg;C, the InP produced by this process displays greatly increased resistivity, as high as 105OHgr;thinsp;cm, compared to growth without plasma where resistivities are typically less than 1 OHgr; cm. An InGaAsP quaternary, with bandhyphen;gap wavelength of 1.55 mgr;m, grown with the plasma displays a sharp band edge and fast photoresponse (15 ps). copy;1996 American Institute of Physics.