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Passivation of Si(111)hyphen;7times;7 by a C60monolayer

机译:Passivation of Si(111)hyphen;7times;7 by a C60monolayer

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C60monolayers are formed on a Si(111)hyphen;7times;7 surface under ultrahigh vacuum (UHV) conditions. The effects of exposure to atmosphere (for 30 min) and water (for 30 s) are assessed by comparing images of the surface acquired using an UHV scanning tunneling microscope. Following exposure and/or immersion we are able to resolve the C60molecules exhibiting hexagonal order in an arrangement which is essentially identical to that formed prior to withdrawal from the UHV system. Our results clearly show that deposition of one monolayer of C60on a Si surface can inhibit chemical attack by water and atmospheric oxygen. copy;1996 American Institute of Physics.

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