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Tandem injection of charge carriers across a metal-dielectric interface

机译:Tandem injection of charge carriers across a metal-dielectric interface

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摘要

A tandem mechanism of charge injection from a metal contact into an organic dielectric via an intermediate injection-facilitating layer is considered. It is shown that introducing such a layer can enhance charge injection considerably if the energy of transport states in this layer is in between the Fermi level of the contact and the energy of transport states in the bulk dielectric. The optimum energy of transport states in the intermediate layer and the minimum thickness thereof are calculated.

著录项

  • 来源
    《Applied physics letters》 |2000年第17期|2758-2760|共3页
  • 作者

    V. I. Arkhipov; H. Baessler;

  • 作者单位

    Institute of Physical, Nuclear and Macromolecular Chemistry and Material Science Center, Philipps-Universitaet Marburg, Hans-Meerwein-Strasse, D-35032 Marburg, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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