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Electronic structure of a Pt-Ge surface alloy

机译:Electronic structure of a Pt-Ge surface alloy

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摘要

The structural and electronic properties of a Pt(lll)-Ge surface alloy are studied by scanning tunneling microscope and angle-resolved photoemission spectroscopy. The electronic band structure in the T-L direction was measured and compared with that of Pt(lll). The crystal field parameters of 10 Dq and xi were evaluated to be 1.77 eV and 0.73 eV respectively. Alloying with Ge was found to reduce 10 Dq and enhance xi compared with pure Pt(lll). (C) 2000 Elsevier Science B.V. All rights reserved. References: 46

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