Contact effects in InP near‐micron transferred electron devices

摘要

AbstractWe have performed an experimental and numerical investigation of near‐micron sized InP transferred electron devices having alloyed metal cathode “current‐limiting” contacts. Both a Boltzmann transport equation (BTE) and drift and diffusion analysis were used to simulate the dc and ac results. Both techniques were capable of predicting the dc and amplification characteristics, but only the BTE approach predicted the narrow large‐signal oscillatory bandwidth observed in the experiments. We found that: The devices behaved in a transit time oscillatory mode; subtle differences in contact conditions caused major change in device output frequency, power, and efficiency; the temperature dependence of the current‐voltage characteristic is a strong indicator of the potential device