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机译:The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane
Cornell Univ, Sch Chem Engn, 120 Olin Hall, Ithaca, NY 14853, USA.;
Models of surface kinetics; Reflection high-energy electron diffraction (rheed); Reflection spectroscopy; Adsorption kinetics; Growth; Hydrogen atom; Silicon; Single crystal surfaces; Desorption-kinetics; Surface; Si(100); Si; Abstraction; Si(001); Si2h6;