Effects of prewells on transport in p-type resonant tunneling diodes

摘要

We investigate the transport of holes through AlAs/In_(0.10)Ga_(0.90)As resonant tunneling diodes which utilize In_(x)Ga_(1-x)As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localization) of charges in the prewell and the formation of direct heavy (light) hole to heavy (light) hole conduction channels as a consequence.