A process of fabrication of alloy junction germanium diodes which give a large forward current for a low forward bias (300 ma. at 0#xb7;5 volts) has been developed. The leakage current is also very small, of the order of a few #x3bc;a. The breakdown voltage is around 40 volts. Storage time measurements have been carried out and results indicate that the diode can be used for low switching speed applications also. The process has been developed to fabricate diodes in batches of five each so as to study the spread of characteristics. The complete details of fabrications and electrical measurements have been discussed.
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