Symmetry considerations reveal that an asymmetry exists relative to orthogonal 60deg; dislocations of thesame signin zinchyphen;blende structure. The effect of this asymmetry has been observed in compositionally graded crystals of In1minus;xGaxP and GaAs1minus;xPxgrown from vapor phase. It is observed that the spatial arrangement of the two sets of misfit dislocations in an orthogonal array is different. In one lang;110rang; direction, the misfit dislocations tend to be uniformly distributed, while in the other lang;110rang; direction there is a marked tendency for periodic banding of the dislocations.
展开▼