Ashyphen;grown superconducting Bi2Si2Ca2Cu3Oxthin films withTczeroof 102 K prepared by rf magnetron sputtering

摘要

Ashyphen;grown highhyphen;quality superconducting thin films of the Bi2Sr2Ca2Cu3Oxwere prepared by rf magnetron sputtering with a regulated shuttering technique. 2223 phase films with a 2201 phase buffer layer were deposited on MgO(100) substrates under rigorous control of the film composition, especially of bismuth contents. As a source of bismuth a sufficiently presputtered Bi2O3target was used. At the preparation, Bihyphen;Srhyphen;Cuhyphen;O and Cahyphen;Cuhyphen;O blocks were deposited alternately, no posthyphen;treatment steps were performed. The zero resistivity critical temperature of the ashyphen;grown film was 102.5 K and the critical current density at 4.2 K was 1.5times;107A/cm2. The growth rate was about 360 Aring;/h.