Quality of AlAshyphen;like and InSbhyphen;like interfaces in InAs/AlSb superlattices: An optical study

摘要

Two shorthyphen;period InAs/AlSb superlattices, grown with an AlAshyphen;like interface and an InSbhyphen;like interface, respectively, were studied with Raman spectroscopy, xhyphen;ray diffraction, and ellipsometry. Our measurements show that the InSbhyphen;like interface grows perfectly pseudomorphically, whereas the sample with the AlAshyphen;like interface shows indications of relaxation and As interdiffusion. This different interface quality seems to be a fundamental problem, rather than the result of the growth technique.