Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors

摘要

We identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very localized defect state which gives rise to a distinct feature in scanning tunneling microscopy images.