Highhyphen;fieldhyphen;induced voltagehyphen;dependent oxide charge

摘要

In this work, we investigate the effects of nondisruptive highhyphen;field stress on the tunneling characteristics of thin SiO2films (100 Aring;) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.