Dispersion of the saturated current in GaAs from dc to 1200 GHz

摘要

The frequency dependence of the smallhyphen;signal conductance of GaAs epilayers biased into current saturation is measured from dc to 1200 GHz. The experiments directly expose the effective energy and momentum relaxation rates in the high field anode domain. Velocity overshoot appears as a recovery of the smallhyphen;signal device conductance at high frequencies.