Electron beam modulation of GaAs metalhyphen;semiconductor fieldhyphen;effect transistors

摘要

Modulation of the surface potential of GaAs Schottky barrier fieldhyphen;effect transistors by 1ndash;6hyphen;kV electrons with current densities in the range between 10minus;5and 10minus;3A/cm2can produce current gainsGges;105for electron beam currents pulsed at rates les;104Hz.