Boron Diffusion in Silicon using Boron Nitride Wafers

摘要

Boron nitride wafers (about 41 boron) were used for boron deposition and drivein diffusion in silicon in the temperature range of 800#x2013;1080#xb0;C. The effect of diffusion, ambient, gas flow rate and BN to Si wafer spacing on diffusion parameters was studied. The upper temperature limit for the use of boron nitride wafers was found to be around 1080#xb0;C. Above this temperature silicon dioxide mask failure was observed during selective diffusion. High voltage planar PIN diodes fabricated using this source showed excellent I-V characteristics.