Injection and drift of a positively charged hydrogen species inphyphen;type GaAs

摘要

Transport of the acceptorhyphen;passivating hydrogen species inphyphen;type GaAs has been observed in reverse bias annealed Al Schottky diode samples. The motion of the positively charged hydrogen across the depletion region of these diodes is confirmed both by changes in the electrically active acceptor profiles with time, and by direct measurement of the migration using secondaryhyphen;ion mass spectrometry on deuterated samples. Acceptor passivation is unstable under minorityhyphen;carrier injection by illumination at 25thinsp;deg;C. Hydrogen injection intophyphen;type GaAs during boiling in water or etching in H2SO4:H2O2:H2O has also been demonstrated.