机译:Direct Visualization of Anomalous-Phosphorus Diffusion in Failure-Bit Gates of SRAM-Load pMOSFETs with High-Resolution Scanning Spreading Resistance Microscopy
Advanced LSI Technology Laboratory, Corporate R&D Center;
Quality Assurance Dept, Oita Operations, Semiconductor Company, Toshiba Corporation;
SSRM; Carrier; SRAM; Dopant; Phosphorous; Poly gate; Anomolous diffusion; V_(th) Variation;