Cross section for photoelectron capture by IrBr3minus;6in AgBr

摘要

The lifetime of photogenerated electrons in AgBr crystals doped with trivalent iridium ions was determined from photoconductivity measurements. A firsthyphen;order electron decay process occurs at Ir3+sites, with a roomhyphen;temperature photoelectron lifetime of 13ndash;150 ps for materials with 89ndash;4 ppm of dopant. A cross section of 26plusmn;5 Aring;2was deduced for photoelectron capture by IrBr3minus;6centers.