We have presented data from a new VUV SE metrology capability with a purged environment for measuring optical properties of substrates and thin films in the range 145-630nm, presenting data from experimental results on CaF{sub}2 substrate, thin oxynitride gate dielectrics, and photoresist layers. The results obtained with this new technique agree with data published in the literature and also with independent measurements derived from using SE with GXR, the latter, particularly, in measuring thin oxynitride gate dielectrics. It may be possible to add GXR capability alongside VUV SE within a purged environment. If so, we think that x-ray information will be helpful in this wavelength range due to its thinner width and great sensitivity to roughness and contamination.
展开▼
