Shallow zinc diffusion in liquid phase epitaxial GaAs and (GaAl)As at 600thinsp;deg;C

摘要

The diffusion of zinc into GaAs and (GaAl)As was studied using a high resolution microsectioning technique. Diffusions were performed into epitaxially grown thin layers comparable to those used in injection laser structures; several boat grown GaAs were also studied. The diffusions were done at a temperature commonly used in device processing; a threehyphen;phase diffusant was used to preclude sample dissociation and damage. A diffusion coefficient of Zn in GaAs of 1.4times;10minus;11cm2thinsp;sminus;1was obtained, and this is in good agreement with the extrapolation of the values obtained at higher temperatures. A marked difference in the diffusion profiles of GaAs and (GaAl)As was observed.