首页> 外文期刊>Semiconductor Science and Technology >DEFINITION OF A COLLISION TIME TENSOR FOR ELECTRIC TRANSPORT IN THE PRESENCE OF ANISOTROPIC SCATTERING MECHANISMS - APPLICATION TO THE CASE OF DISLOCATION SCATTERING IN GAAS
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DEFINITION OF A COLLISION TIME TENSOR FOR ELECTRIC TRANSPORT IN THE PRESENCE OF ANISOTROPIC SCATTERING MECHANISMS - APPLICATION TO THE CASE OF DISLOCATION SCATTERING IN GAAS

机译:DEFINITION OF A COLLISION TIME TENSOR FOR ELECTRIC TRANSPORT IN THE PRESENCE OF ANISOTROPIC SCATTERING MECHANISMS - APPLICATION TO THE CASE OF DISLOCATION SCATTERING IN GAAS

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摘要

It is recalled that the relaxation time approximation generally used to solve Boltzmann's kinetic equation does not allow, in a simple way, the treatment of anisotropic scattering potentials when evaluating transport phenomena. An alternative approach for the description of transport phenomena, based on the dielectric properties of the carrier gas, is then proposed and leads to the definition of a collision time tenser in the particular case of anisotropic scattering mechanisms. The use of the present theory is illustrated in the case of dislocation scattering in semiconductors (GaAs), which represent the most typical example of anisotropic scattering potentials. References: 23

著录项

  • 来源
    《Semiconductor Science and Technology》 |1995年第7期|914-921|共8页
  • 作者

    Farvacque JL.;

  • 作者单位

    UNIV SCI & TECH LILLE FLANDRES ARTOIS STRUCT & PROP ETAT SOLIDE LAB CNRS URA 234 F-59655 VILLENEUVE DASCQ FRANCE;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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