Synthesis of Small Diameter Silicon Nanowires on SiO_2 and Si_3N_4 Surfaces

摘要

We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO_2 and Si_3N_4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO_2 and Si_3N_4 substrates is higher (460-470℃) than that of the case of normal Si substrates (440℃). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the guided growth over metal structures is also shown to be possible. Selective growth of SiNWs on pre-patterned surfaces opens up the possibility of self-aligning SiNWs for the integration of complex device structures.