Modeling of exposure and development processes in electron and ion lithography

摘要

In this paper we describe a complete mathematical model and corresponding software for the exposure and development process simulations pertinent to electron and ion lithography (EIL). The main steps of this model are: (i) exposure process modeling - electron and ion scattering model and calculation of dissipated energy, and (ii) development process modeling - solubility rate calculation and development profiles evolution simulation. The models presented for the exposure and development process simulations are realised by means of a software package. Thus it is possible to predict the final result in the case of EIL under given initial conditions. The simulation result is very useful when optimizing particular technological processes in microcircuit lithography. It can be used for the development of an algorithm to correct the proximity effect of real microelectronic structures.