By using the NE645 (80), NPN Silicon Bipolar transistor, two stages of L-Band low-noise amplifier in microstripline construction on teflon fibre glass have been developed. The amplifier has achieved minimum noise figure of 1.8 dB and 26 dB gain in the frequency band 1.2 to 1.4 GHz. This amplifier is useful as a front-end amplifier in a radar receiver system. Design, construction and performance of the amplifier are presented.
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